La importancia de la personalidad del traductor en los itinerarios de especialidad y en la selección de personal

Treball Final de Grau en Traducció i Interpretació. Codi: TI0983. Curs acadèmic: 2016/2017A pesar de que a simple vista no lo pueda parecer, la personalidad de los traductores influye mucho más de lo que se cree en el proceso traductor y en la toma de decisiones, como han puesto de manifiesto estudios empíricos. Para analizar cuáles son las diferencias individuales en la personalidad de los traductores en la elección del itinerario de especialidad, se ha llevado a cabo un estudio con los estudiantes de los cuatro itinerarios de traducción de la Universidad Jaume I, a fin de ver si podemos identificar los rasgos típicos de los estudiantes de cada itinerario. Además, dada la gran importancia de la personalidad en las tareas de traducción, también se ha entrevistado a responsables de tres agencias de traducción para ver si la personalidad de los traductores es un factor relevante a la hora de reclutar personal. Se ha comprobado así que sí hay algunos rasgos comunes en la personalidad de los estudiantes de cada itinerario y que realmente esta cuestión no es un factor relevante en las agencias de traducción, sino que se valora, sobre todo, el trabajo diario y la calidad de las pruebas de traducción

High-Performance ZnO Nanowire Transistors with Aluminum Top-Gate Electrodes and Naturally Formed Hybrid Self-Assembled Monolayer/AlO_<i>x</i> Gate Dielectric

A method for the formation of a low-temperature hybrid gate dielectric for high-performance, top-gate ZnO nanowire transistors is reported. The hybrid gate dielectric consists of a self-assembled monolayer (SAM) and an aluminum oxide layer. The thin aluminum oxide layer forms naturally and spontaneously when the aluminum gate electrode is deposited by thermal evaporation onto the SAM-covered ZnO nanowire, and its formation is facilitated by the poor surface wetting of the aluminum on the hydrophobic SAM. The hybrid gate dielectric shows excellent electrical insulation and can sustain voltages up to 6 V. ZnO nanowire transistors utilizing the hybrid gate dielectric feature a large transconductance of 50 μS and large on-state currents of up to 200 μA at gate-source voltages of 3 V. The large on-state current is sufficient to drive organic light-emitting diodes with an active area of 6.7 mm² to a brightness of 445 cd/m². Inverters based on ZnO nanowire transistors and thin-film carbon load resistors operate with frequencies up to 30 MHz

Nanoantenna-Enhanced Infrared Spectroscopic Chemical Imaging

Spectroscopic infrared chemical imaging is ideally suited for label-free and spatially resolved characterization of molecular species, but often suffers from low infrared absorption cross sections. Here, we overcome this limitation by utilizing confined electromagnetic near-fields of resonantly excited plasmonic nanoantennas, which enhance the molecular absorption by orders of magnitude. In the experiments, we evaporate microstructured chemical patterns of C₆₀ and pentacene with nanometer thickness on top of homogeneous arrays of tailored nanoantennas. Broadband mid-infrared spectra containing plasmonic and vibrational information were acquired with diffraction-limited resolution using a two-dimensional focal plane array detector. Evaluating the enhanced infrared absorption at the respective frequencies, spatially resolved chemical images were obtained. In these chemical images, the microstructured chemical patterns are only visible if nanoantennas are used. This confirms the superior performance of our approach over conventional spectroscopic infrared imaging. In addition to the improved sensitivity, our technique provides chemical selectivity, which would not be available with plasmonic imaging that is based on refractive index sensing. To extend the accessible spectral bandwidth of nanoantenna-enhanced spectroscopic imaging, we employed nanostructures with dual-band resonances, providing broadband plasmonic enhancement and sensitivity. Our results demonstrate the potential of nanoantenna-enhanced spectroscopic infrared chemical imaging for spatially resolved characterization of organic layers with thicknesses of several nanometers. This is of potential interest for medical applications which are currently hampered by state-of-art infrared techniques, e.g., for distinguishing cancerous from healthy tissues

Threshold-Voltage Shifts in Organic Transistors Due to Self-Assembled Monolayers at the Dielectric: Evidence for Electronic Coupling and Dipolar Effects

The mechanisms behind the threshold-voltage shift in organic transistors due to functionalizing of the gate dielectric with self-assembled monolayers (SAMs) are still under debate. We address the mechanisms by which SAMs determine the threshold voltage, by analyzing whether the threshold voltage depends on the gate-dielectric capacitance. We have investigated transistors based on five oxide thicknesses and two SAMs with rather diverse chemical properties, using the benchmark organic semiconductor dinaphtho­[2,3-b:2′,3′-<i>f</i>]­thieno­[3,2-<i>b</i>]­thiophene. Unlike several previous studies, we have found that the dependence of the threshold voltage on the gate-dielectric capacitance is completely different for the two SAMs. In transistors with an alkyl SAM, the threshold voltage does not depend on the gate-dielectric capacitance and is determined mainly by the dipolar character of the SAM, whereas in transistors with a fluoroalkyl SAM the threshold voltages exhibit a linear dependence on the inverse of the gate-dielectric capacitance. Kelvin probe force microscopy measurements indicate this behavior is attributed to an electronic coupling between the fluoroalkyl SAM and the organic semiconductor

(Oligo-)Thiophene Functionalized Tetraazaperopyrenes: Donor–Acceptor Dyes and Ambipolar Organic Semiconductors

Tetraazaperopyrenes (TAPPs) have been functionalized with thiophene and terthiophene units of different architecture resulting in a variety of organic donor–acceptor (D–A) compounds. The influence of the connection of the thiophenes to the TAPP core on their structural, photophysical and electrochemical properties has been studied in detail by a combination of X-ray crystallography, UV–vis and fluorescence spectroscopy as well as cyclic voltammetry, which allowed the establishment of structure–property relationships. The HOMO–LUMO gap is significantly decreased upon substitution of the TAPP core with electron-donating thiophene units, the extent of which is strongly influenced by the orientation of the thiophene units. The latter also crucially directs the molecular packing in the solid. Linkage at the α-position allows both inter- and intramolecular N···S interaction, whereas linkage in the β-position prevents intramolecular N···S interaction, resulting in a less pronounced conjugation of the TAPP core and the thiophene units. The new TAPP derivatives were processed as semiconductors in organic thin-film transistors (TFTs) that show ambipolar behavior. The insight into band gap and structure engineering may open up new possibilities to tailor the electronic properties of TAPP-based materials for certain desired applications

Few-Layer WSe₂ Schottky Junction-Based Photovoltaic Devices through Site-Selective Dual Doping

Ultrathin sheets of two-dimensional (2D) materials like transition metal dichalcogenides have attracted strong attention as components of high-performance light-harvesting devices. Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe₂ in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, the source region is coated with an Al₂O₃ layer, which causes local n-type doping and correspondingly an increase of the Schottky barrier at the contact. By scanning photocurrent microscopy using green laser light, it could be confirmed that photocurent generation is restricted to the region around the source contact. The local photoinduced charge separation is associated with a photoresponsivity of up to 20 mA W^–1 and an external quantum efficiency of up to 1.3%. The demonstrated device concept should be easily transferrable to other van der Waals 2D materials

Hexathienocoronenes: Synthesis and Self-Organization

Here we report hexathienocoronenes (HTCs), fully thiophene-annelated coronenes in which six double bonds in the periphery are thieno-fused. The derivatives tetrasubstituted with hexyl and dodecyl chains show a phase formation that strongly depends on the chain length. HTCs are remarkably stronger donors than the known thiophene-annelated coronenes but do not readily assemble into well-ordered films when deposited from the vapor phase. Thus, thin-film transistors fabricated by vacuum deposition have only modest field-effect mobilities of 0.002 cm² V^–1 s^–1

High-Yield Transfer Printing of Metal–Insulator–Metal Nanodiodes

Nanoscale metal–insulator–metal (MIM) diodes represent important devices in the fields of electronic circuits, detectors, communication, and energy, as their cutoff frequencies may extend into the “gap” between the electronic microwave range and the optical long-wave infrared regime. In this paper, we present a nanotransfer printing method, which allows the efficient and simultaneous fabrication of large-scale arrays of MIM nanodiode stacks, thus offering the possibility of low-cost mass production. In previous work, we have demonstrated the successful transfer and electrical characterization of macroscopic structures. Here, we demonstrate for the first time the fabrication of several millions of nanoscale diodes with a single transfer-printing step using a temperature-enhanced process. The electrical characterization of individual MIM nanodiodes was performed using a conductive atomic force microscope (AFM) setup. Our analysis shows that the tunneling current is the dominant conduction mechanism, and the electrical measurement data agree well with experimental data on previously fabricated microscale diodes and numerical simulations